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| 2SA1576F PNP Silicon Elektronische Bauelemente RoHS Compliant Product General Purpose Transistor Feature * Complements the 2SC4081F SOT-323 Dim A A Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280 Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420 B L BS COLLECTOR C D 2 3 3 Top View 1 BASE 1 G H J K V 2 EMITTER 1 2 3 G C D H K J L S V Marking Code: 5AX X = hFE Rank Code All Dimension in mm Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -60 -50 -6 -150 225 V V V mA mW Unit Characteristics at Ta = 25 Parameter Collector -Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter -Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter -Base Cutoff Current Collector Saturation Voltage 1 DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min -60 -50 -6 120 - Typ. 140 4.0 Max -100 -100 -500 560 5.0 Unit V V V nA nA mV MHz pF Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IE=-2 mA, f=100MHz VCB=-12V, f=1MHz, IE=0 *Pulse Test: Pulse Width = 380us, Duty Cycle = 2% Classification of hFE Rank Q R S Range 120 - 270 180 - 390 270 - 560 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SA1576F PNP Silicon Elektronische Bauelemente General Purpose Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SA1576F PNP Silicon Elektronische Bauelemente General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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